ISSN:
1433-0768
Keywords:
Key words Photoelectrochemical
;
Ferric tungstate
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract Active ferric tungstate was prepared by fusing an equimolar mixture of tungsten oxide and ferric oxide at 1100 °C and annealing at 800 °C for 20 h. Analysis of the electrode material by X-ray diffraction showed that its composition was Fe2WO6. When this material was illuminated by visible light in 0.1 M NaOH solution, an anodic photocurrent at a positive potential of 0.5 V (SCE) was obtained. Therefore, this material is considered as an n-type semiconductor. The d.c. conductivity of this material at 25 °C was 4 × 10−6 Ω−1 cm−1. In the dark, unexpectedly high anodic currents were observed at positive potentials of 0.8 V (SCE) in 0.1 M NaOH. These currents are attributed to the existence of a high density of electron-hole recombination centers within the band-gap of ferric tungstate. When dimethyl viologen (DMV) was used as an electroactive compound in the electrolyte, the anodic photocurrents increased significantly. The oxidation of DMV is thus expected to compete with the electron-hole recombination process. Furthermore, the process of electron-hole recombination was also predicted from the shape of the photocurrent transients under interrupted illumination. These transients exhibited first-order relaxation effects in the region of the onset time of the photocurrents. The band-gap energy of Fe2WO6 was found to be about 1.5 eV and its flat-band potential in 0.1 M NaOH was about −0.3 V (SCE). The photoelectrochemical properties of ferric tungstate are explained according to the formalism of the band model of the semiconductor/electrolyte interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s100080050083
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