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Laser-Assisted Growth Of AlGaAs Films (1989)

Pouch, John J. ; Aron, Paul R. ; Wilt, David M. ; [et al.]

In: Other Sources

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Publication Date: 2019-07-12

Description: Films of aluminum gallium arsenide grown on gallium arsenide by laser-assisted organometallic chemical-vapor deposition. Films single-crystal and contain no detectable oxygen or carbon. Laser beam impinges on substrate in quartz reaction chamber surrounded by radio-frequency induction coils. Film grows much more rapidly at 500 degree C than 450 degree C. Slight amount of interfacial oxygen detectable in film deposited at lower temperature.

Keywords: FABRICATION TECHNOLOGY

Type: LEW-14638 , NASA Tech Briefs (ISSN 0145-319X); 13; 5; P. 83

Format: text

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