Publication Date:
2017-07-07
Description:
Author(s): Wei Chen and Alfredo Pasquarello The accuracy of G W in the determination of defect energy levels is assessed through calculations on a set of well-characterized point defects in semiconductors: the As antisite in GaAs, the substitutional Mg in GaN, the interstitial C in Si, the Si dangling bond, and the Si split-vacancy complex in … [Phys. Rev. B 96, 020101(R)] Published Wed Jul 05, 2017
Keywords:
Structure, structural phase transitions, mechanical properties, defects
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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