ISSN:
1433-0768
Keywords:
Key words Silicon
;
Germanium
;
CVD
;
Epitaxy
;
Boron
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract The effect of boron incorporation during chemical vapor deposition of SiGe thin films from silane, germane, diborane, and hydrogen gas mixtures is investigated. It is shown that boron incorporation during SiGe thin-film growth degrades the Ge profile under certain growth conditions when the boron concentration is high enough (〉1019 cm−3). In single-wafer atmospheric-pressure processes we find that no Ge concentration depression occurs at deposition temperatures above 675 °C. In multi-wafer atmospheric-pressure processes we find an increasingly occurring depression of the Ge concentration along the wafer stack, even at temperatures above 675 °C. In low-pressure processes, high-level in-situ doping of SiGe with boron is possible at temperatures as low as 550 °C without any degradation of the Ge profile. Thus LPCVD is superior to APCVD with respect to high-level in situ doping of SiGe with boron. The presence or absence of Ge profile degradation in boron-doped SiGe thin films is explained by the discussion of growth rate enhancement phenomena.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s100080050100
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