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  • 1
    Publication Date: 2019-07-12
    Description: The development of transportation systems that use new and sustainable energy technologies is of utmost importance due to the possible future shortfalls that current transportation modes will encounter because of increased volume and costs. The introduction and further research and development of new transportation and energy systems by materials researchers at the National Aeronautics and Space Administration (NASA) Langley Research Center (LaRC) and the Department of Transportation are discussed in this Technical Memorandum. In this preliminary study, airship concepts were assessed for cargo transportation using various green energy technologies capable of 24-hour operation (i.e., night and day). Two prototype airships were successfully constructed and tested at LaRC to demonstrate their feasibility: one with commercially available solar cells for operation during the daytime and one with microwave rectennas (i.e., rectifying antennas) developed in-house for night-time operation. The test results indicate the feasibility of a cargo transportation airship powered by new green energy sources and wireless power technology. Future applications will exploit new green energy sources that use materials and devices recently developed or are in the process of being developed at LaRC. These include quantum well SiGe solar cells; low, mid-, and high temperature thermoelectric modules; and wireless microwave and optical rectenna devices. This study examines the need and development of new energy sources for transportation, including the current status of research, materials, and potential applications.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/TM-2014-218241 , L-20307 , NF1676L-17035
    Format: application/pdf
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  • 2
    Publication Date: 2019-08-28
    Description: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
    Keywords: Electronics and Electrical Engineering
    Format: application/pdf
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