Publication Date:
2019-07-13
Description:
The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.
Keywords:
Electronics and Electrical Engineering
Type:
The 2006 Radiation Effects on Components and Systems Workshop; Sep 27, 2006 - Sep 29, 2006; Athens; Greece
Format:
application/pdf
Permalink