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    On the validity of equivalent electron fluence for GaAs solar cells (1982)
    In:  Other Sources
    Details
    Publication Date: 2019-07-27
    Description: A simple model for particulate radiation damage in shallow-junction heteroface GaAs solar cells is used to evaluate the equivalent electron fluence concept especially in the sense of additivity of electron and proton exposure. It is found that spatial dependent factors for low-energy proton exposure results in a dose dependent equivalent fluence ratio so that additivity within the equivalent fluence concept is generally not possible.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Photovoltaic Specialists Conference; Sept. 27-30, 1982; San Diego, CA
    Format: text
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