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  • ENERGY PRODUCTION AND CONVERSION  (4)
  • space environment  (1)
  • 1
    ISSN: 1572-9508
    Keywords: infrared detectors ; radiation ; space environment
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present a trend analysis of the ISO-SWS detector performance and a study of the space radiation effects on the SWS detectors. In particular, dark currents, dark current noise and detector responses have been checked as a function of time through the mission and as a function of time in arevolution. The results show that these parameters were stable during the mission in all bandsbut for band 3 (Si:As). Dark currents and responses were found to be higherin the first hours following the start of the science window,especially in band 2 (Si:Ga). We have studied the impacts of cosmic rays and radiation belt particles on the SWS detectors, as well as of the only large solar proton event on November 6, 1997,that occurred during the ISO mission (operated during solar minimum).The observed glitch rates in all SWS bands are found to be between 2 and4 times higher than the value predicted by the CREME96 model for the cosmic ray flux in the period considered. The bands that registered the highest glitch rates showed also a correlation with the electron fluxes measured on theGOES 9 spacecraft. From the distribution of glitchheights (voltage jumps in the detector signal), we have derived the deposited energy distributions of the particles hits. Our results lead to the conclusion that secondaryparticles produced in the shield and the detectors contributed at least as much as cosmic rays to the observed glitch rate. The effects on the detectors of the November 6, 1997 event, which caused that all observationsin a revolution were declared failed, are described in detail.
    Type of Medium: Electronic Resource
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  • 2
    Publication Date: 2011-08-17
    Description: Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Electrochemical Society; vol. 127
    Format: text
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  • 3
    Publication Date: 2019-06-27
    Description: Microstructural and electrical evaluation tests were performed on nickel-doped p-type silicon wafers before and after solar cell fabrication. The concentration levels of nickel in silicon were 5 x 10 to the 14th power, 4 x 10 to the 15th power, and 8 x 10 to the 15th power atoms/cu cm. It was found that nickel precipitated out during the growth process in all three ingots. Clumps of precipitates, some of which exhibited star shape, were present at different depths. If the clumps are distributed at depths approximately 20 micron apart and if they are larger than 10 micron in diameter, degradation occurs in solar cell electrical properties and cell conversion efficiency. The larger the size of the precipitate clump, the greater the degradation in solar cell efficiency. A large grain boundary around the cell effective area acted as a gettering center for the precipitates and impurities and caused improvement in solar cell efficiency. Details of the evaluation test results are given.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-162790 , JPL-PUB-79-116 , DOE/JPL-1012-34
    Format: application/pdf
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  • 4
    Publication Date: 2019-06-28
    Description: Efficiency of silicon solar cells containing about one quadrillon atoms cu cm of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200 C to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon mateial.
    Keywords: ENERGY PRODUCTION AND CONVERSION
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  • 5
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    In:  Other Sources
    Publication Date: 2019-07-13
    Description: Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Photovoltaic Specialists Conference; Jun 05, 1978 - Jun 08, 1978; Washington, DC
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