ALBERT

Description: Knowledge of the global scale distribution of atmospheric ozone and its temporal variability can be achieved using a satellite-based nadir-viewing device making high spectral resolution measurements with high signal-to-noise ratios. This would enable observation in the pressure-broadened wings of strong O3 lines while minimizing the impact of undesirable signal contributions associated with, for example, the terrestrial surface and interfering species. The Fabry-Perot interferometer (FPI) provides high spectral resolution and high throughput capabilities that are essential for this measurement task. The periodic nature of the Fabry-Perot instrument function can be advantageous when observation of periodic spectra is desired. However, for most applications, additional optical elements are necessary to reduce the effect of unwanted passbands. This is frequently accomplished using additional Fabry-Perot etalons in a series configuration in conjunction with a bandpass filter. This paper discusses a Fabry-Perot interferometer conceptual instrument design to achieve tropospheric and total ozone monitoring capability from a satellite-based nadir-viewing geometry. The design involves a double-etalon fixed-gap series configuration FPI along with an ultra-narrow bandpass filter to achieve single-order operation with an overall spectral resolution of approximately .068 cm(exp -1). The impact of inter-etalon reflections has been reduced to acceptable levels by placement of a slightly attenuating medium in between the etalons. A passive device is selected for low power consumption, and continuous day/night coverage, independent of solar zenith angle, is enabled by observing within the strong 9.6 micron ozone infrared band. The IR-FPI detection will be performed through implementation of the new Circle to Line Interferometer Optical (CLIO) system, developed by researchers at the Space Physics Research Laboratory (SPRL) of the University of Michigan, to accomplish focal plane fringe detection; the CLIO system converts the circular interferometric fringes into a linear pattern which then can be detected by conventional linear array detectors. A multiplex signal advantage is achievable as all necessary frequencies can be measured simultaneously using a multichannel configuration. Through proper selection of channel spectral regions, the FPI optimized for tropospheric O3 measurements can simultaneously observe a stratospheric component and thus the total O3 column abundance.

Description: A first principles pn junction device model has predicted new designs for high voltage, high efficiency InP solar cells. Measured InP material properties were applied and device parameters (thicknesses and doping) were adjusted to obtain optimal performance designs. Results indicate that p/n InP designs will provide higher voltages and higher energy conversion efficiencies than n/p structures. Improvements to n/p structures for increased efficiency are predicted. These new designs exploit the high absorption capabilities, relatively long diffusion lengths, and modest surface recombination velocities characteristic of InP. Predictions of performance indicate achievable open-circuit voltage values as high as 943 mV for InP and a practical maximum AM0 efficiency of 22.5 percent at 1 sun and 27 C. The details of the model, the optimal InP structure and the effect of individual parameter variations on device performance are presented.

Description: This paper describes ultra-lightweight, high performance, thin, light trapping GaAs solar cells for advanced space power systems. The device designs can achieve 24.5 percent efficiency at AMO and 1X conditions, corresponding to a power density of 330 W/m2. A significant breakthrough lies in the potential for a specific power of 2906 W/kg because the entire device is less than 1.5 microns thick. This represents a 440 percent improvement over conventional 4-mil silicon solar cells. In addition to being lightweight, this thin device design can result in increased radiation tolerance. The attachment of the cover glass support to the front surface has been demonstrated by both silicone and electrostatic bonding techniques. Device parameters of 1.002 volts open-circuit voltage, 80 percent fill factor, and a short-circuit current of 24.3 mA/sq cm have been obtained. This demonstrates a conversion efficiency of 14.4 percent resulting in a specific power of 2240 W/kg. Additionally, this new technology offers an alternative approach for enabling multi-bandgap solar cells and high output space solar power devices. The thin device structure can be applied to any 3-5 based solar cell application, yielding both an increase in specific power and radiation tolerance.

Description: In order to determine if a solar cell would indeed emit usable light as expected, a gallium arsenide solar cell was forward biased and examined with an infrared viewer. The light emitted from the solar cell was not uniform, ever though the I-V curve of the solar cell displayed no defects.

Description: The combination of a free standing AlGaAs top solar cell and an existing bottom solar cell is the highest performance, lowest risk approach to implementing the tandem cell concept. The solar cell consists of an AlGaAs substrate layer, an AlGaAs base layer, an AlGaAs emitter, and an ultra-thin AlGaAs window layer. The window layer is compositionally graded which minimizes reflection at the window layer/emitter interface and creates a built-in electric field to improve quantum response in the blue region of the spectrum. Liquid phase epitaxy (LPE) is the only viable method to produce this free standing top solar cell. Small (0.125 sq cm), transparent p/n AlGaAs top solar cells were demonstrated with optimum bandgap for combination with a silicon bottom solar cell. The efficiency of an AlGaAs/Si stack using the free standing AlGaAs device upon an existing silicon bottom solar cell is 24 pct. (1X, Air Mass Zero (AM0). The n/p AlGaAs top solar cell is being developed in order to facilitate the wiring configuration. The two terminal tandem stack will retain fit, form, and function of existing silicon solar cells. Progress in the development of large area (8 and 16 sq cm), free standing AlGaAs top solar cells is discussed.

Description: Preliminary results are encouraging for the achievement of high conversion efficiencies using a GaAsP top solar cell mechanically stacked on a conventional silicon solar cell. A realistic maximum of 29.4 percent is suggested when both the top and bottom solar cells are state of the art. Practical system efficiencies greater than 25 percent are attainable in the near future with the use of a state of the art bottom solar cell.

Description: A new technique has been developed to capture, digitize, and enhance the image of light emission from a forward biased direct bandgap solar cell. Since the forward biased light emission from a direct bandgap solar cell has been shown to display both qualitative and quantitative information about the solar cell's performance and its defects, signal processing techniques can be applied to the light emission images to identify and analyze shunt diodes. Shunt diodes are of particular importance because they have been found to be the type of defect which is likely to cause failure in a GaAs solar cell. The presence of a shunt diode can be detected from the light emission by using a photodetector to measure the quantity of light emitted at various current densities. However, to analyze how the shunt diodes affect the quality of the solar cell the pattern of the light emission must be studied. With the use of image enhancement routines, the light emission can be studied at low light emission levels where shunt diode effects are dominant.