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  • 1
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    Contact regrowth technique for low-resistance nonalloyed contacts to the hot-electron transistor (1988)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: A novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts is reported. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In(0.53)Ga(0.47)As layer, an InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8 x 10 to the -7th ohm sq cm to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 53; 1738-174
    Format: text
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  • 2
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    InGaAs/InAlAs hot-electron transistor (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Using InGaAs for the base and InAlAs for the emitter and collector barriers, the first hot-electron transistor in this material system is fabricated. It is shown that 1.6 percent of the injected hot electrons can be transported ballistically through a 0.3 micron thick In(0.53)Ga(0.47)As plus 800-A-thick InAlAs barrier layer at 77 K giving rise to an average mean free path of 920 A. An energy spread of 130 MeV was observed for the ballistic electrons injected at about 700 MeV above the thermal equilibrium conditions. The value of collector barrier heights measured are in reasonable agreement with those deduced independently from thermionic emission studies in InGaAs gate, InAlAs/InGaAs capacitor structures.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 48; 1799-180
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  • 3
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    An extended Reed Solomon decoder design (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: It has previously been shown that the Reed-Solomon (RS) codes can correct errors beyond the Singleton and Rieger Bounds with an arbitrarily small probability of a miscorrect. That is, an (n,k) RS code can correct more than (n-k)/2 errors. An implementation of such an RS decoder is presented in this paper. An existing RS decoder, the AHA4010, is utilized in this work. This decoder is especially useful for errors which are patterned with a long burst plus some random errors.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The 1991 3rd NASA Symposium on VLSI Design; 9 p
    Format: application/pdf
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  • 4
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    Cross-guide coupler modeling and design (1988)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Modeling of cross-guide couplers based on the theory of equivalent electric and magnetic dipoles of an aperture is described. Additional correction factors due to nonzero wall thickness and large aperture are also included in this analysis. Comparisons of the measured and calculated results are presented for cross-guide couplers with circular or cross-shaped coupling apertures. A cross-guide coupler was designed as a component of the C-band feed to support the Phobos mission.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommunications and Data Acquisition Report; p 82-88
    Format: application/pdf
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  • 5
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    Microwave time delays for the dual L-C-band feed system (1989)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: A new dual-frequency feed system at Goldstone is designed to receive the Phobos spacecraft signal at L-band (1668 + or - 40 MHz) and transmit to the spacecraft at C-band (5008.75 + or - 5.00 MHz) simultaneously. Hence, calculations of the time delay from the C-band range calibration coupler to the phase center of the L-C dual feed and back to the L-band range calibration coupler are required to correct the range measurements. Time delays of the elements in the dual-frequency feed system are obtained mostly from computer calculations and partly from experimental measurements. The method used and results obtained are described.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommunications and Data Acquisition Report; p 126-131
    Format: application/pdf
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  • 6
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    Microwave time delays for the X/S-band feed system at X-band (1989)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The X-band time delays for the X/S feed system of the 34-meter high efficiency antenna are required to refine current X-band downlink (8450 plus or minus 50 MHz) calibrations and prepare for the Magellan uplink (7190 plus or minus 45 MHz). The time delays of elements in the X-band feed system are obtained mostly via computer calculation and partly via measurement. The methods used and results obtained are presented. There is good agreement with theory.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommunications and Data Acquisition Report; p 248-251
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  • 7
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    DSS 13 phase 2 pedestal room microwave layout (1991)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The design and predicted performance is described of the microwave layout for three band operation of the beam waveguide antenna Deep Space Station 13. Three pedestal room microwave candidate layout designs were produced for simultaneous X/S and X/Ka band operation. One of the three designs was chosen based on given constraints, and for this design the microwave performance was estimated.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: The Telecommunications and Data Acquisition Report; p 298-306
    Format: text
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  • 8
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    Sixty GHz IMPATT diode development (1985)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-174969 , NAS 1.26:174969 , W-45797
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  • 9
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    Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si (1991)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Electrical measurements on shallow Si n+-p junction diodes with a 30-nm TiSi2 contacting layer demonstrate that an 80-nm-thick amorphous Ta36Si14N50 film prepared by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 plasma very effectively prevents the interaction between the Si substrate with the TiSi2 contacting layer and a 500-nm Cu overlayer. The Ta36Si14N50 diffusion barrier maintains the integrity of the I-V characteristics up to 900 C for 30-min annealing in vacuum. It is concluded that the amorphous Ta36Si14N50 alloy is not only a material with a very low reactivity for copper, titanium, and silicon, but must have a small diffusivity for copper as well.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters (ISSN 0741-3106); 12; 321-323
    Format: text
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