Publication Date:
2011-08-24
Description:
Success has been achieved in extending the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron. High responsivity of 0.5 A/W, high quantum efficiency of 12 percent, and high detectivity as well as an excellent noise equivalent temperature difference of 4 mK have been achieved at T = 50 K. High performance of 19 mK has also been achieved at an even higher temperature of 60 K.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
Journal of Applied Physics (ISSN 0021-8979); 70; 5101-510
Format:
text
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