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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (4)
  • 1
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    Resistive synaptic interconnects for electronic neural networks (1987)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Vacuum Science and Technology A (ISSN 0734-2101); 5; 1407-141
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    NASA TECHNICAL REPORTS
  • 2
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    Performance and impedance studies of thin, porous molybdenum and tungsten electrodes for the alkali metal thermoelectric converter (1988)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Columnar, porous, magnetron-sputtered molybdenum and tungsten films show optimum performance as alkali metal thermoelectric converter electrodes at thicknesses less than 1.0 micron when used with molybdenum or nickel current collector grids. Power densities of 0.40 W/sq cm for 0.5-micron molybdenum films at 1200 K and 0.35 W/sq cm for 0.5-micron tungsten films at 1180 K were obtained at electrode maturity after 40-90 h. Sheet resistances of magnetron sputter deposited films on sodium beta-double-prime-alumina solid electrolyte (BASE) substrates were found to increase very steeply as thickness is decreased below about 0.3-double-prime 0.4-micron. The ac impedance data for these electrodes have been interpreted in terms of contributions from the bulk BASE and the porous electrode/BASE interface. Voltage profiles of operating electrodes show that the total electrode area, of electrodes with thickness less than 2.0 microns, is not utilized efficiently unless a fairly fine (about 1 x 1 mm) current collector grid is employed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Electrochemistry (ISSN 0021-891X); 18; 410-416
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    NASA TECHNICAL REPORTS
  • 3
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    Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks (1987)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
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    NASA TECHNICAL REPORTS
  • 4
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    Neural network based feed-forward high density associative memory (1987)
    In:  Other Sources
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    Publication Date: 2019-07-13
    Description: A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEDM - International Electron Devices Meeting; Dec 06, 1987 - Dec 09, 1987; Washington, DC; United States
    Format: text
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