Publication Date:
2019-07-13
Description:
Heteroepitaxial (InP/GaAs) and homo-epitaxial (InP/InP) cells were irradiated by 1-MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of open-circuit voltage.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
IEEE Photovoltaic Specialists Conference; Oct 07, 1991 - Oct 11, 1991; Las Vegas, NV; United States
Format:
text
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