Publication Date:
2019-06-27
Description:
A phenomenological formulation that incorporates both the tunneling and avalanche mechanisms in an IMPATT diode is presented. The I-V characteristic of a diode where the two mechanisms are present is calculated. The agreement between the predicted I-V characteristics of diodes with both tunneling and avalanche processes and the measured ones indicates the soundness of the formulation presented.
Keywords:
ELECTRONIC EQUIPMENT
Type:
Journal of Applied Physics; 43; Sept
Format:
text
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