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  • 1
    facet.materialart.
    Unknown
    In:  Other Sources
    Publication Date: 2019-06-27
    Description: A phenomenological formulation that incorporates both the tunneling and avalanche mechanisms in an IMPATT diode is presented. The I-V characteristic of a diode where the two mechanisms are present is calculated. The agreement between the predicted I-V characteristics of diodes with both tunneling and avalanche processes and the measured ones indicates the soundness of the formulation presented.
    Keywords: ELECTRONIC EQUIPMENT
    Type: Journal of Applied Physics; 43; Sept
    Format: text
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  • 2
    facet.materialart.
    Unknown
    In:  Other Sources
    Publication Date: 2019-06-27
    Description: Metal-oxide-metal tunnel diode properties, discussing parametric effects on small and large signals detector operation
    Keywords: ELECTRONIC EQUIPMENT
    Type: ; YAL SOCIETY (
    Format: text
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