ALBERT

Description: A number of refractory semiconductors are under study at the Jet Propulsion Laboratory for application in thermal to electric energy conversion for space power. The main thrust of the program is to improve or develop materials of high figure of merit and, therefore, high conversion efficiencies over a broad temperature range. Materials currently under investigation are represented by silicon-germanium alloys, lanthanum telluride, and boron carbide. The thermoelectric properties of each of these materials, and prospects for their further improvements, are discussed. Continued progress in thermoelectric materials technology can be expected to yield reliable space power systems with double to triple the efficiency of current state of the art systems.

Description: Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Description: Thermoelectric energy conversion utilizing nuclear heat sources has been employed for several decades to generate power for deep space probes. In the past, lead telluride and, more recently, silicon-germanium alloys have been the prime choices as thermoelectric materials for this application. Currently, a number of refractory semiconductors are under investigation at the Jet Propulsion Laboratory in order to produce power sources of higher conversion efficiency and, thus, lower mass per unit of power output. Included among these materials are improved Si-Ge alloys, rare earth compounds and boron-rich borides. The criteria used to select thermoelectric materials, in general, and the above materials, in particular, will be discussed. The current state of the art and the accomplishments to date in thermoelectric materials research will be reviewed.

Description: The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Description: Distance learning is not new. Since the time that radio has embellished our culture distance learning has taken on may forms. With the onset of television, video tape and satellite link ups the world of multimedia has taken a presence in our remote learning environment. Now in the information age new models for bring the best education to people through out the world is in its early stages. Recent "Information Age" technological developments have made key advancements to distance learning through the greater bandwidths now available over the Internet and a broader communications infrastructure that extends to classrooms throughout the country and the world. Further, new software compression technology allows audio and video to be communicated over the Internet much more efficiently. Larger amounts of data can be transferred to remote sites at less cost. The purpose of this paper is to demonstrate the use of state-of-art technology in the educational community. The focus will be on virtual conferences, virtual instruction and remote education. The techniques herein have been developed by NASA and the University of North Dakota(UND) through the use of existing software and hardware purchased in the United States. NASA has awarded UND a grant for continued research in this area based on their pioneering effort to date. NASA has been conducting "Virtual Conferences" from Ames Research Center in order to make unique educational opportunities available to participants across the country and internationally. Through the use of this technical approach, hundreds of teachers have been able to attend events where physical or financial barriers traditionally prevented their attendance. This technique is currently being adopted by industry due to its scaleable merit.

Description: Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

Description: The paper reports the results of measurements (Seebeck and Hall coefficients, electrical resistivity, and thermal conductivity) on silicon-germanium (Si-20 at. pct Ge) alloy with boron phosphide, B(6.5)P) as an additive, prepared as described by McLane et al. (1986). The power factor (Seebeck coefficient squared divided by electrical resistivity) and the thermal conductivity of SeGe/B(6.5)P material were found to be lower than for the 'standard' SiGe (Si-22 at. pct Ge) material. However, no net improvement was achieved in the figure-of-merit of the sample tested. It is suggested that structural inhomogeneities, revealed by a SEM examination, might be responsible for this lack of improvement.