ISSN:
1057-9257
Schlagwort(e):
Zinc sulphide
;
MOCVD growth
;
t-Butyl mercaptan
;
Dimethylzinc
;
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
ZnS has been grown on GaAs(100) substrates by atmospheric pressure metal-organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn) and t-butyl mercaptan (t-BuSH). The effects of the reactant gas phase molar ratio and the growth temperature on the characteristics of the material grown have been investigated. The structural quality of the layer is demonstrated by X-ray rocking curve half-widths of less than 300 arcsec for the epilayers. There is little significant pre-reaction and the layers are of excellent surface morphology and layer uniformity.
Zusätzliches Material:
4 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/amo.860010108
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