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  • 1
    Publication Date: 2019-06-28
    Description: The use of gridded back contact on thin silicon solar cells 50 micrometers was investigated. An unexpected increase in short circuit current of almost 10 percent was experienced for 2 cm x 2 cm cells. Control cells with the standard continuous contact metallization were fabricated at the same time as the gridded back cells with all processes identical up to the formation of the back contact. The gridded back contact pattern was delineated by evaporation of Ti-Pd over a photo-resist mask applied to the back of the wafer; the Ti-Pd film on the controls was applied in the standard fashion in a continuous layer over the back of the cell. The Ti-Pd contacts were similarly applied to the front of the wafer, and the grid pattern on both sides of the cell was electroplated with 8-10 micrometers of silver.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol.; p 67-70
    Format: application/pdf
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  • 2
    Publication Date: 2019-07-13
    Description: The effect of using gridded back contacts on silicon solar cells made with Al baked surface field (BSF) was experimentally investigated and found to result in a significant increase in conversion efficiency due to higher short-circuit current. An increase of 5 to 8% was noted for thin cells while a smaller increase was observed for standard thickness cells. Several possible explanatory mechanisms are suggested and summarized, including stress relief, incomplete BSF formation, improved back surface recombination velocity, and improved optical reflection off the back silicon-air interface.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Photovoltaic Specialists Conference; May 12, 1981 - May 15, 1981; Kissimmee, FL
    Format: text
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  • 3
    Publication Date: 2019-07-13
    Description: The type of coplanar back contact solar cell described was constructed with interdigitated n(+) and p(+) type regions on the back of the cell, such that both contacts are made on the back with no metallization grid on the front. This cell construction has several potential advantages over conventional cells for space use namely, convenience of interconnects, lower operating temperatures and higher efficiency due to the elimination of grid shadowing. However, the processing is more complex, and the cell is inherently more radiation sensitive. The latter problem can be reduced substantially by making the cells very thin (approximately 50 micrometers). Two types of interdigitated back contact cells are possible, the types being dependent on the character of the front surface. The front surface field cell has a front surface region that is of the same conductivity type as the bulk but is more heavily doped. This creates an electric field at the surface which repels the minority carriers. The tandem junction cell has a front surface region of a conductivity type that is opposite to that of the bulk. The junction thus created floats to open circuit voltage on illumination and injects carriers into the bulk which then can be collected at the rear junction. For space use, the front surface field cell is potentially more radiation resistant than the tandem junction cell because the flow of minority carriers (electrons) into the bulk will be less sensitive to the production of recombination centers, particularly in the space charge region at the front surface.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-165272
    Format: application/pdf
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  • 4
    Publication Date: 2019-07-13
    Description: A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. It was found that certain impurities such as titanium, tantalum, and vanadium were bad, even in very small concentrations. Cell performance appeared relatively tolerable to impurities such as copper, carbon, calcium, chromium, iron and nickel (in the concentration levels which were considered).
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-163133 , DOE/JPL-955307 , JPL-9950-325
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  • 5
    Publication Date: 2017-04-04
    Description: Seismological, geological and geodetic data have been integrated to characterize the seismogenic structure of the late 2013-early 2014 moderate energy (maximum local magnitude MLmax = 4.9) seismic sequence that struck the interior of the Matese Massif, part of the Southern Apennines active extensional belt. The sequence, heralded by a ML = 2.7 foreshock, was characterized by two main shocks with ML = 4.9 and ML = 4.2, respectively, which occurred at a depth of ∼17–18 km. The sequence was confined in the 10–20 km depth range, significantly deeper than the 1997–1998 sequence which occurred few km away on the northeastern side of the massif above ∼15 km depth. The depth distribution of the 2013–14 sequence is almost continuous, albeit a deeper (16–19 km) and a shallower (11–15 km) group of events can be distinguished, the former including the main shocks and the foreshock. The epicentral distribution formed a ∼10 km long NNW–SSE trending alignment, which almost parallels the surface trace of late Pliocene–Quaternary southwest-dipping normal faults with a poor evidence of current geological and geodetic deformation. We built an upper crustal model profile for the eastern Matese massif through integration of geological data, oil exploration well logs and seismic tomographic images. Projection of hypocentres on the profile suggests that the seismogenic volume falls mostly within the crystalline crust and subordinately within the Mesozoic sedimentary cover of Apulia, the underthrust foreland of the Southern Apennines fold and thrust belt. Geological data and the regional macroseismic field of the sequence suggest that the southwest-dipping nodal plane of the main shocks represents the rupture surface that we refer to here as the Matese fault. The major lithological discontinuity between crystalline and sedimentary rocks of Apulia likely confined upward the rupture extent of the Matese fault. Repeated coseismic failure represented by the deeper group of events in the sequence, activated in a passive fashion the overlying ∼11–15 km deep section of the upper crustal normal faults. We consider the southwest-dipping Matese fault representative of a poorly known type of seismogenic structures in the Southern Apennines, where extensional seismogenesis and geodetic strain accumulation occur more frequently on NE-dipping, shallower-rooted faults. This is the case of the Boiano Basin fault located on the northern side of the massif, to which the 1997–1998 sequence is related. The close proximity of the two types of seismogenic faults at the Matese Massif is related to the complex crustal architecture generated by the Pliocene–early Pleistocene contractional and transpressional tectonics.
    Description: Published
    Description: 823-837
    Description: 2T. Tettonica attiva
    Description: JCR Journal
    Description: partially_open
    Keywords: Seismicity and tectonics ; Continental tectonics: extensional ; Crustal structure ; 04. Solid Earth::04.04. Geology::04.04.01. Earthquake geology and paleoseismology ; 04. Solid Earth::04.04. Geology::04.04.09. Structural geology ; 04. Solid Earth::04.06. Seismology::04.06.06. Surveys, measurements, and monitoring
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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