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  • Conductivity phenomena in semiconductors and insulators  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 3 (1984), S. 701-709 
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators ; Photoconduction and photovoltaic effects ; photodielectric effects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Monocristalli puri di PbI2 sono stati accresciuti con la tecnica di raffinazione a zone ed è stata registrata la distribuzione spettrale della fotocorrente con l'uso di diversi laser a colore conE‖c eE⊥c. Il bordo di assorbimento fondamentale appare a 2.36 eV (E⊥c) e appare essere dicromatico in natura con una separazione di 0.05 eV. Lo schema di decadimento della fotocorrente a diversi voltaggi, temperature ed intensità d'illuminazione è stato usato per calcolare le vite medie dei portatori di carica. Le caratteristiche di voltaggio-fotocorrente sono state usate per calcolare la concentrazione di trappole e la mobilità dei portatori di carica. Le caratteristiche lux-ampère alla frequenza del bordo della banda sono state studiate con diversi voltaggi applicati.
    Abstract: Резюме Выращивается чистый монокристалл PbI2. Регистрируется спектральное распределение фототока, используя различные лазеры на красителях, в случаеE‖c иE⊥c. Фундаментальный край поглощения возникает при 2.36 эВ (E⊥c). Обнаружена дихроматичность с расщеплением 0.05 эВ. Кривые затухания фототока при различных напряжениях, температурах и интенсивностях облучения используется для вычисления времени жизни носителей заряда. Зависимость фототока от напряжения используется для вычисления концентрации ловушек и подвижности носителей зарядов. При различных приложенных напряжениях исследуются зависимости фототока от интенсивности облучения при частотах, соответствующих краю зоны.
    Notes: Summary Pure PbI2 single crystals have been grown by the zone-refining technique and the spectral distribution of the photocurrent by using different dye-lasers has been recorded withE‖c andE⊥c. The fundamental absorption edge appears at 2.36 eV (E⊥c) and is found to be dichromatic in nature with a splitting of 0.05 eV. The decay pattern of the photocurrent at different voltages, temperatures and intensities of illumination has been used to calculate the lifetimes of charge carriers. The photocurrent-voltage characteristics have been used to calculate the trap concentration and mobility of the charge carriers. The lux-ampère characteristics at the band edge frequency have been studied at different applied voltages.
    Type of Medium: Electronic Resource
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