Publication Date:
2015-07-15
Description:
Author(s): Binhui Hu, M. M. Yazdanpanah, B. E. Kane, E. H. Hwang, and S. Das Sarma We report experiment and theory on an ambipolar gate-controlled Si(111)-vacuum field effect transistor where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate v… [Phys. Rev. Lett. 115, 036801] Published Mon Jul 13, 2015
Keywords:
Condensed Matter: Electronic Properties, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
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