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  • Solid-State Physics  (2)
  • Coated Pits, Cell-Membrane/*physiology  (1)
  • 1
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    A test of clathrin function in protein secretion and cell growth (1985)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1985-11-29
    Description: Clathrin-coated membranes are intimately associated with a variety of protein transport processes in eukaryotic cells, yet no direct test of clathrin function has been possible. The data presented demonstrate that Saccharomyces cerevisiae does not require clathrin for either cell growth or protein secretion. Antiserum to the yeast clathrin heavy chain has been used to isolate a molecular clone of the heavy chain gene (CHC1) from a library of yeast DNA in lambda gt11. Clathrin-deficient mutant yeast have been obtained by replacing the single chromosomal CHC1 gene with a disrupted version of the cloned DNA. Cells harboring a nonfunctional chc1 allele produce no immunoreactive heavy chain polypeptide, and vesicles prepared from mutant cells are devoid of clathrin heavy and light chains. Although clathrin-deficient cells grow two to three times more slowly than normal, secretion of invertase occurs at a nearly normal rate. Therefore protein transport through the secretory pathway is not obligately coupled to the formation of clathrin-coated vesicles.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Payne, G S -- Schekman, R -- New York, N.Y. -- Science. 1985 Nov 29;230(4729):1009-14.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/2865811" target="_blank"〉PubMed〈/a〉
    Keywords: Biological Transport ; *Cell Physiological Phenomena ; Clathrin/genetics/immunology/*physiology ; Coated Pits, Cell-Membrane/*physiology ; Endosomes/*physiology ; Eukaryotic Cells/*physiology ; Genes ; Genes, Fungal ; Genetic Engineering ; Glycoside Hydrolases/secretion ; Macromolecular Substances ; Molecular Weight ; Proteins/*secretion ; Saccharomyces cerevisiae/genetics ; beta-Fructofuranosidase
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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    PAPER CURRENT
  • 2
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    Cr(+2) Diffusion Doping in ZnSe (1997)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: Chromium doped zinc selenides crystals have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which has an emission range of 2-3 pm. In this study, a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 degrees Celsius. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained. The diffusivity was estimated to be about 10-* sq cm/sec using a classical diffusion model. Resistivity was derived from current-voltage measurements and in the 107-10(exp 16) Ohms-cm and increased as function of Cr concentration.
    Keywords: Solid-State Physics
    Type: URC97069 , NASA University Research Centers Technical Advances in Education, Aeronautics, Space, Autonomy, Earth and Environment; 1; 401-406
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    Chromium Diffusion Doping on ZnSe Crystals (1997)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.
    Keywords: Solid-State Physics
    Type: The First National Student Conference: NASA University Research Centers at Minority Institutions; 111-114; NASA-CR-205049
    Format: text
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    NASA TECHNICAL REPORTS
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