ISSN:
0032-3888
Keywords:
Chemistry
;
Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
The unique ability of the tert-butoxycarbonyl protecting group (t-BOC) to be removed by a catalytic amount of strong acid has intensified the search towards new chemically amplified resist systems based on this chemistry. A series of new copolymers of t-BOC-styrene and sulfur dioxide have been prepared by free radical polymerization. These polysulfones function as chemical amplification positive resists for deep-UV lithography when mixed with either 2,6-dinitrobenzyl tosylate or triarylsulfonium salt acid precursors. The lithographic characteristics of 2:1 and 3:1 polysulfones have been evaluated. The new positive deep-UV photoresists are aqueous base developed and are capable of 0.5 μm resolution. Even though the photoresists containing 2,6-dinitrobenzyl tosylate are less sensitive than the onium salt formulations, they displayed greater contrast values. For example the poly(t-BOC-styrene sulfone) (2:1) 15 wt % tosylate resist formulation exhibits a sensitivity of 26 mJ/cm2 and a contrast of ∼20.
Additional Material:
8 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/pen.760291304
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