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  • 1
    Publication Date: 2019-07-13
    Description: The computational fluid dynamics code FLUENT has been adopted to simulate the entire rectangular-channel-like (3-D) geometry of an experimental CVD reactor designed for Si deposition. The code incorporated the effects of both homogeneous (gas phase) and heterogeneous (surface) chemistry with finite reaction rates of important species existing in silane dissociation. The experiments were designed to elucidate the effects of gravitationally-induced buoyancy-driven convection flows on the quality of the grown Si films. This goal is accomplished by contrasting the results obtained from a carrier gas mixture of H2/Ar with the ones obtained from the same molar mixture ratio of H2/He, without any accompanying change in the chemistry. Computationally, these cases are simulated in the terrestrial gravitational field and in the absence of gravity. The numerical results compare favorably with experiments. Powerful computational tools provide invaluable insights into the complex physicochemical phenomena taking place in CVD reactors. Such information is essential for the improved design and optimization of future CVD reactors.
    Keywords: CHEMISTRY AND MATERIALS (GENERAL)
    Type: NASA-TM-102001 , E-4702 , NAS 1.15:102001 , Euro CVD 7 Conference; Jun 19, 1989 - Jun 23, 1989; Perpignan; France
    Format: application/pdf
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  • 2
    Publication Date: 2019-07-13
    Description: Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.
    Keywords: CHEMISTRY AND MATERIALS (GENERAL)
    Type: NASA-TM-106137 , E-7818 , NAS 1.15:106137 , International Conference on Chemical Vapor Deposition (CVD 12); May 16, 1993 - May 21, 1993; Honolulu, HI; United States
    Format: application/pdf
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