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  • 1
    ISSN: 1572-896X
    Keywords: nanotechnology ; nanocluster ; array ; self-assembly ; GaAs ; STM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics , Technology
    Notes: Abstract We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface.
    Type of Medium: Electronic Resource
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  • 2
    Publication Date: 2018-03-16
    Description: Author(s): Da Liu, Jia Liu, Carlos E. M. Wagner, and Xiao-Ping Wang The LEP experiment at CERN provided accurate measurements of the Z neutral gauge boson properties. Although all measurements agree well with the standard model (SM) predictions, the forward backward asymmetry of the bottom-quark remains almost 3 σ away from the SM value. We proposed that this anomaly... [Phys. Rev. D 97, 055021] Published Thu Mar 15, 2018
    Keywords: Beyond the standard model
    Print ISSN: 0556-2821
    Electronic ISSN: 1089-4918
    Topics: Physics
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