Publication Date:
2019-07-13
Description:
The use of the column V-trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs(1-y)Sb(y), Al(x)Ga(1-x)Sb, and Ga(1-x)In(x)As as examples.
Keywords:
INORGANIC AND PHYSICAL CHEMISTRY
Type:
Semiconductor growth technology;; Jan 26, 1982 - Jan 27, 1982; Los Angeles, CA
Format:
text
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