ISSN:
1432-2234
Keywords:
Key words: Ga1
;
xAlxAs semiconductor
;
Cathodoluminescence
;
Auger molecule
;
Nonradiative transitions
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract. Under the particular situation of highly doped and almost compensated semiconductors, a new kind of bound state happens at high external excitation levels, which is formed of a close donor–acceptor molecule and a neighboring second donor or acceptor. The de-excitation behavior of such a bound state resembles characteristics known from Auger transitions and for this reason it is called an Auger molecule. The existence region of Auger molecules is determined in silicon-doped Ga1− x Al x As by electron-beam excited luminescence measurements at low temperature. The main peak position and the luminescence intensity of the donor–acceptor recombination channel turn out to be affected in a characteristic manner by the existence of Auger molecules at high excitation levels. An analysis of corresponding rate coefficients for the reproduction of experimental results is also presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s002140000156
Permalink
