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  • Amaranthaceae  (2)
  • Pfaffia paniculata  (2)
  • Polymer and Materials Science  (2)
  • SOLID-STATE PHYSICS  (2)
Collection
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Phytochemistry 23 (1984), S. 139-142 
    ISSN: 0031-9422
    Keywords: Amaranthaceae ; Brazil ginseng ; Pfaffia paniculata ; nortriterpenoid saponin ; pfaffic acid ; pfaffosides.
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Phytochemistry 23 (1984), S. 1703-1705 
    ISSN: 0031-9422
    Keywords: Amaranthaceae ; Brazil ginseng ; Pfaffia paniculata ; nortriterpenoid saponin ; pfaffosides.
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 595-597 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A new type of sputtered neutral mass spectrometer, named SNART (Sputtered Neutral Analysis - Riken Type), was evaluated. SNART uses an argon plasma that is driven by an electron beam. The plasma is used for both sputtering of the sample and post-ionizing the sputtered neutral atoms. A depth profile of multilayered Ge/Si was taken by SNART to evaluate depth resolution. The quantitativeness of SNART was also checked using a stainless-steel sample. The results were compared with those by conventional SIMS and glow discharge optical emission spectrometry. The following features of SNART were confirmed: (1) high post-ionization efficiency; (2) high depth resolution; (3) high sputtering rate; (4) no matrix effect on post-ionization efficiency; and (5) high quantitativeness.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 17 (1991), S. 773-778 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In order to overcome the poor quantitativeness of conventional SIMS, sputtered neutral mass spectrometry (SNMS) employing non-resonant laser post-resonant laser post-ionization has been studied. By studied. By combining a time-of-flight (TOF) analyzer with a powerful excimer laser, it was confirmed that non-resonant laser post-ionization is capable of quantitative analysis of impurities at the pm level. On comparing laser wavelengths, 193 nm (ArF) gave a higher post-ionization efficiency than 248 nm (KrF). It was also demonstrated that the electronegative element sulphur can be detected as positive ions by post-ionization. Furthermore, surface metallic contaminants in a small area (250 μm square) could be determined down to 1011 atoms cm-2.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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  • 5
    Publication Date: 2013-08-31
    Description: Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA, Goddard Space Flight Center, AMSAHTS 1990: Advances in Materials Science and Applications of High Temperature Superconductors; p 35
    Format: application/pdf
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  • 6
    Publication Date: 2013-08-31
    Description: Characteristics of the electron-doped-type Nd(sub 2-x)Ce(sub x)CuO4 system and substituted Bi-system were studied using the high quality thin film samples grown by rf magnetron sputtering and/or subsequent heat treatment. The Nd(sub 2-x)Ce(sub x)CuO4 samples with excellent superconducting properties were obtained in thin films and their optical and X-ray photoelectron spectroscopy (XPS) studies were performed with regard to the Ce content and reducing treatment. Substituted BiSr-Ln-Cu-O thin films were prepared and growth conditions for Bi-system with 2-2-1-2 and 2-2-2-2 phases were found. Moreover, a new 2-2-1-2 phase in the simple Bi-Sr-Cu-O system was fabricated by thin film processing and 80 K superconductivity was obtained.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA. Goddard Space Flight Center, AMSAHTS 1990: Advances in Materials Science and Applications of High Temperature Superconductors; p 281-290
    Format: application/pdf
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