Publikationsdatum:
2012-09-19
Beschreibung:
Author(s): V. M. Kaganer, B. Jenichen, O. Brandt, S. Fernández-Garrido, P. Dogan, L. Geelhaar, and H. Riechert High-resolution x-ray diffraction peak profiles from self-induced GaN nanowires are studied theoretically and experimentally. We show that the peak profiles can be explained as a result of an inhomogeneous fluctuating strain in nanowires. We attribute this strain to random distortions caused by latt... [Phys. Rev. B 86, 115325] Published Tue Sep 18, 2012
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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