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  • 1
    Electronic Resource
    Electronic Resource
    Experimental sensitivity analysis of pseudomorphic InGaAs/AlAs resonant-tunneling diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6305-6317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Through the use of a novel vertically integrated resonant-tunneling diode (RTD) heterostructure we have established experimentally the relationship between intentional variations in the structural parameters of the pseudomorphic In0.53Ga0.47As/AlAs resonant tunneling diode (i.e., barrier thickness, quantum-well thickness, quantum-well composition, and doping density) and the measured current–voltage characteristics of the device. Based upon the results of these experiments, we have determined that a 1 monolayer increase in AlAs barrier width, InGaAs quantum-well width, or InAs subwell width results in a peak current reduction of 56%±7%, 19%±2%, and 18%±3%, respectively. Further, a 1% decrease in indium mole fraction of the InGaAs quantum well has been found to increase the peak current by 10%±1%. Sensitivity parameters have been tabulated for both the peak current and the peak voltage of the RTD. Through the use of these parameters, the maximum allowed fluctuation in the RTDs structural parameters has been estimated for a given tolerance in the RTDs electrical characteristics. Further, these data can also be used to evaluate the feasibility of in situ epitaxial growth control of resonant tunneling devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360511
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Tantalum nitride films as resistors on chemical vapor deposited diamond substrates'' [J. Appl. Phys. 73, 5208 (1993)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2736-2736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357041
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  • 3
    Electronic Resource
    Electronic Resource
    The Structure of Paniculatine: a Revision (1989)
    s.l. : American Chemical Society
    Journal of natural products 52 (1989), S. 430-432 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50062a044
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  • 4
    Electronic Resource
    Electronic Resource
    Detection of Diterpenoid Alkaloids in Aphids Feeding on Aconitum napellus and Aconitum paniculatum (1990)
    s.l. : American Chemical Society
    Journal of natural products 53 (1990), S. 204-206 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50067a033
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  • 5
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-InGaAsP nonalloyed ohmic contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed ohmic contacts of Pt/Ti to 5×1018 cm−3 doped p-InGaAsP (λg =1.3 μm) have been fabricated by rapid thermal processing of sputtered and e-gun-deposited metallizations. While the former as-deposited had a rectifying characteristic, the latter showed ohmic behavior prior to any heat treatment, with a specific contact resistance of 4×10−3 Ω cm2. Rapid thermal processing at temperatures higher than 400 °C caused the formation of ohmic contacts for the sputtered metals also, but with the evaporated metals producing slightly lower contact resistance. The lowest specific contact resistance values of 3.6–5.5×10−4 Ω cm2 for evaporated and sputtered metallizations, respectively, were achieved in both cases as a result of heating at 450 °C for 30 s. These heating conditions produced only a limited reaction at the Ti/InGaAsP interface, which was sharper for the e-gun-deposited contact, but had a significant effect on the stresses in the Ti/Pt bilayer. In both the sputtered and electron gun evaporated samples, the stresses were inverted from tensile as-deposited to compressive with values of 2.4×109 and 1.0×109 dyn cm−2, respectively, as a result of the heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343291
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  • 6
    Electronic Resource
    Electronic Resource
    The microstructure and electrical properties of contacts formed in the Ni/Al/Si system due to rapid thermal processing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5526-5533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and electrical properties of the contacts formed in the Ni(30 nm)/Al(10 nm)/〈100〉n-Si system due to rapid thermal processing were studied at temperatures between 300 and 900 °C. A melting at the intermediate Al layer was observed already at about 580 °C after 2-s heat treatments. This rapid eutectic melting, assumed to initiate at the Al-Si interface, resulted in the formation of a unique contact composed of the Ni(Al0.5Si0.5)/Al3Ni/NixSiy/n-Si structure with fairly smooth interfaces between the layers. The sheet resistance of the layers and the Schottky barrier height of the contact were measured as a function of the rapid thermal processing temperatures. As a result of the eutectic melting reaction at 580 °C the sheet resistance of the formed layers decreased from 3.2 to 2.6 Ω/(D'Alembertian), the Schottky barrier height between the layers and Si increased from 0.61–0.76 eV, and the effective electrically active area of the contact increased. These electrical properties are discussed in correlation with the microstructure formed in the Ni/Al/Si system due to the rapid thermal processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340329
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  • 7
    Electronic Resource
    Electronic Resource
    AuBe/p-InGaAsP contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2056-2060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloyed ohmic contacts of AuBe (1% Be by weight) to 5×1018 cm−3 Zn-doped p-InGaAsP (λg=1.3 μm) were fabricated by rapid thermal processing and its performance was compared to those of the contacts formed by conventional furnace heating. The specific contact resistance decreased from a value of 4.9×10−4 Ω cm2 as-deposited to a value of 4.9×10−7 Ω cm2 as a result of rapid thermal processing at 420 °C for 30 s. This value was much lower than the value of 3.9×10−6 Ω cm2 obtained as a result of furnace heat treatment at 420 °C for 10 min. Rapid thermal processing at higher temperatures caused a sharp increase of the specific contact resistance. Auger depth profiling indicated that the degradation of the contact electrical performance at temperatures of 450 °C or higher were caused by intensive localized interactions between the AuBe and the InGaAsP and out-diffusion of all the quaternary elements toward the surface of the contact. The effective stress in the alloyed layer, normalized to the initial AuBe thickness of 80 nm, was tensile with a value of 7×109 dyn cm−2, and was less sensitive to the alloying parameters (time and temperature) than was the contact resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344295
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  • 8
    Electronic Resource
    Electronic Resource
    Stress measurements of Pt/Ti/InP and Pt/Ti/SiO2/InP systems: In situ measurements through sintering and after rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6237-6246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stresses induced in an evaporated Pt(75 nm)/Ti(50 nm) bilayer metallization scheme on InP and SiO2 (300 nm)/InP substrates, as well as the stress in a SiO2 layer (300 nm) on an InP substrate, were measured in situ during sintering at temperatures of 25 to 500 °C and after rapid thermal processing (RTP) at temperatures of 400, 450, and 500 °C for 30 s. The as-deposited highly tensile Pt/Ti bilayer structure on InP (5×109 dyn cm−2) was found to be stress-free when heated to 400 °C and to have relatively low tensile stress after cooling back to room temperature. The as-deposited Pt/Ti/SiO2 structure on InP was found to be only moderately tensile stressed (3×109 dyn cm−2) and became more tensile as a result of heating to 500 °C (5×109 dyn cm−2). The high tensile stress was preserved even after cooling back to room temperature. This is mostly due to the tendency of the plasma-enhanced chemical vapor deposited (PECVD) SiO2 layer to undergo densification and switch its as-deposited compressive stress (−2.5×109 dyn cm−2) to tensile (2×109 dyn cm−2) when heated to 500 °C. The measured stresses after rapid thermal processing (RTP) revealed no observable difference from the in situ measured stresses. This suggests a negligible influence of the speed of heating and cooling through the RTP on the overall stresses induced in the thin layers. The previously unknown coefficient of thermal expansion and the biaxial elastic moduli of the PECVD SiO2 and the evaporated Ti and Pt thin films were determined by in situ stress measurements of the above-mentioned structure as well as systems composed of the same thin layers deposited on Si, GaAs, GaP, and InAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345190
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  • 9
    Electronic Resource
    Electronic Resource
    Deuterium magnetic resonance and permeability in porous media (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3259-3263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deuterium nuclear magnetic resonance relaxation studies were performed on sandstones, carbonates, and synthetic porous samples. The magnetization decay in the rotating frame T1ρ is a stretched exponential in rock samples.The relaxation time in porous media is related to the absolute permeability by the relation k=C(T1ρ)2φ2. We show that T1ρ is proportional to the width of the pore size distribution and the permeability, and is proportional to the water saturation in partially saturated rock. These results provide new methods for estimating absolute permeability and saturation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342680
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  • 10
    Electronic Resource
    Electronic Resource
    Transport properties of high-Tc planar Josephson junctions fabricated by nanolithography and ion implantation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2978-2983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a process for fabrication of planar high-Tc Josephson junctions using nanolithography and a 200 keV ion implanter. Conduction occurs in the ab plane and has no metallurgical interface. Devices may be tuned to operate at temperatures between 1 K and the Tc of the undamaged superconducting material by varying the length of the weak link or by changing the amount of ion damage. We have examined the normal state and superconducting properties of these films and find behavior consistent with a de Gennes dirty limit proximity effect model. Current–voltage curves, Ic(T) and R(T) data suggest a temperature dependent superconducting-normal metal interface that we have incorporated into the proximity effect model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372286
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