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  • 1
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    An experimental investigation into the feasibility of higher efficiency silicon solar cells. (1972)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Keywords: AUXILIARY SYSTEMS
    Type: Photovoltaic Specialists Conference; May 02, 1972 - May 04, 1972; Silver Spring, MD
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Theoretical and experimental investigation of 'grating' type photovoltaic cells (1974)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: The fabrication procedure and properties of 'grating' cells made by forming a fine grating pattern of aluminum alloyed into n-silicon wafers are described. The finest grating lines achieved in the cells described were 5 microns; the smallest spacing was about 15 microns. The best temperature for alloying was found to be about 600 C, a bit above the Si-Al eutectic temperature (576 C). The short-circuit current obtained from the best of these cells exposed to 100 mW/sq cm of (simulated air mass zero) illumination was at least equal to that obtained from conventional diffused cells, but their open-circuit voltage was lower. Their quantum yield was strongly blue-shifted; it was flat from 4000 to 8500 A.
    Keywords: AUXILIARY SYSTEMS
    Type: Photovoltaic Specialists Conference; Nov 13, 1973 - Nov 15, 1973; Palo Alto, CA
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Methods of improving the efficiency of photovoltaic cells (1974)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.
    Keywords: AUXILIARY SYSTEMS
    Type: NASA-CR-138485 , SAR-8
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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