ISSN:
1432-0630
Keywords:
61.10
;
68.55
;
81.10
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00618156
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