ISSN:
1432-0630
Keywords:
79.20.Nc
;
66.30.Jt
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Previously reported experimental results on sputtering and enhanced diffusion processes in CrSi2 during 100 keVXe+ bombardment at different temperatures have been quantitatively analyzed. The framework for the analysis is a simple theoretical model in which the Si atoms are considered mobile in a matrix of Cr atoms whose density is assumed constant and diffusivity is considered zero everywhere. Erosion velocity of the matrix (due to the sputtering of Cr atoms), sputtering and enhanced diffusion processes of Si atoms are taken into account in the mathematical model. In our analysis we show that the time evolution of the total number of sputtered atoms in binary solids cannot yield an unambigous conclusion as to the existence of preferential sputtering. Further, it is found that in the case of CrSi2 the preferential sputtering of Si atoms depends on the suicide temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616482
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