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  • 1
    Electronic Resource
    Electronic Resource
    Scattering phase shifts in Ni and Zn doped Y-123 (1996)
    Springer
    Journal of low temperature physics 105 (1996), S. 1415-1420 
    Details
    ISSN: 1573-7357
    Keywords: 74.62Dh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Cu-site substituted thin films of YBa2(Cu1-zMz)3O7-δ (M=Zn,Ni) are reinvestigated. The Tc-suppression and residual resistivities ϱo are measured as a function of the concentration z. We found that for low concentrations z 〈 4% the substituents occupy preferrably the in-plane Cu sites whereas for higher concentrations the chain sites are also occupied. Although the residual resistivities of Ni and Zn differ only slightly, the Tc-suppression of Zn is 2.3 times larger than that of Ni. To reconcile the measured resistivities with predictions of a two dimensional scattering model, it is necessary to assume a scattering potential of finite range and to take scattering phase shifts] δl of higher angular momentum (l 〉 0) into account. The different Tc-suppression rates for Zn and Ni are also discussed within this picture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00753898
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial Bi2Sr2CaCu2O8+δ thin films (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 217-219 
    Details
    ISSN: 1572-9605
    Keywords: Bi-2212 thin films ; dc sputtering ; structural characterization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We report a dc sputtering method for the fullin situ preparation of Bi2Sr2CaCu2O8+δ thin films on SrTiO3 and LaAlO3.T c values of more than 90 K can be achieved by oxidizing annealing below the melting point, followed by a reducing anneal at 500°C. The structural properties of the films are revealed by X-ray diffraction in Bragg-Brentano geometry (strongc-axis orientation with FWHM (0 0 10)=0.3) and also byΦ scans (epitaxy within the substrate plane). Rutherford backscattering and channeling confirmed the correct composition of the cations while the minimum yield,χ min, is 23%. Depth profiles by SNMS show a very homogeneous distribution of the cations with no detectable loss of bismuth near the surface. The surface morphology of the films was studied by SEM and by STM. Patterning of the films in lateral geometry can be performed by photolithographic techniques without degradation ofT c .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00730398
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