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  • 1
    Electronic Resource
    Electronic Resource
    The photoconductive effect in Pb2CrO5 thin films prepared by an electron-beam evaporation technique (1985)
    Springer
    Applied physics 38 (1985), S. 103-107 
    Details
    ISSN: 1432-0630
    Keywords: 72.40.+w ; 73.60.Hy ; 77.55.+ f ; 81.15.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoconductivity in Pb2CrO5 thin film prepared by an electron-beam evaporation technique is described. Crystallographically, three kinds of thin films are fabricated which depend on substrate temperature. A sample showing a similar x-ray diffraction profile to the evaporation source material gives the highest photoconductive response. Light illumination from the glass substrate onto the sample improves photoconductivity. A pair of interdigital electrodes is more effective than a pair of planar electrodes on the photoconductive measurement. A band gap energy level of Pb2CrO5 thin film is around 2.2–2.4 eV as a result of the spectral photoconductive response.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620460
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of SnO2/Pb2CrO5 thin film/metal photovoltaic device (1986)
    Springer
    Applied physics 39 (1986), S. 109-114 
    Details
    ISSN: 1432-0630
    Keywords: 72.40.+w ; 73.60. Hy ; 81.15. Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photovoltaic behavior in a design of SnO2/Pb2CrO5 thin film/metal (Au or Al) is described as functions of light intensity and wavelength for two different illumination directions. The Pb2CrO5 thin film in each device is formed over the SnO2 coated glass substrate by an electron-beam evaporation technique. When illuminated from the metal side, the device with Au or Al shows the positive or the negative photovoltage, respectively. For the illumination from the SnO2 side, the device with Au has the negative photovoltage at the short wavelength, and the positive one at the longer, while the device with Al has the negative photovoltage at both wavelength regions. These photovoltaic devices have two junctions at both sides of the Pb2CrO5 thin film. The band model of each device is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616827
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    Paper (German National Licenses)
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