ISSN:
1090-6487
Keywords:
71.35.Cc
;
78.20.Ls
;
73.40.Kp
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract An above-barrier localized excitonic state in a Bragg confining semiconductor superstructure based on an (In, Ga)As/GaAs heterosystem is observed experimentally. A sharp excitonic resonance corresponding to the interference mechanism of localization is observed in the absorption spectrum of this structure at 1.548 eV, i.e., 33 meV above the energy of a bulk exciton in GaAs. The oscillator strength of the above-barrier exciton is twice that of the main excitonic state in the system, and the above-barrier exciton gives rise to sharp Landau oscillations in the magnetoabsorption spectra.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568090
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