ISSN:
1090-6487
Keywords:
72.20.My
;
72.80.Cw
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract It is found that the magnetoresistance of manganese-doped porous amorphous silicon in fields 0–5 T is negative and depends on the orientation of the magnetic field. The experimental curves of the magnetic-field dependence are described well by the theory of quantum corrections to the conductivity in the one-dimensional case. The phase coherence length in the material is ≈25 nm at T=4.2 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568007
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