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Metal-insulator transition in amorphous Si1−c Mnc obtained by ion implantation (1997)

Yakimov, A. I. ; Dvurechenskii, A. V.

Springer

JETP letters 65 (1997), S. 354-358

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ISSN: 1090-6487

Keywords: 71.23.Cq ; 71.30.+h

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract A metal-insulator transition (MIT) induced by a change in the impurity Mn concentration in a material with topological disorder — amorphous Si1−c Mnc — is investigated. It is found that near the critical point the localization radius, permittivity, and conductivity vary according to a power law in accordance with the scaling theory of localization. The critical exponents are determined. It is concluded that the basic mechanisms of the MIT in disordered systems do not depend on the type of disorder and are universal.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.567371

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