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  • 7.60  (1)
  • 81.10  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Optical probing of laser-induced shock waves in air (1996)
    Springer
    Applied physics 63 (1996), S. 307-310 
    Details
    ISSN: 1432-0649
    Keywords: 7.60 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Shock Waves (SW) were produced in air by focusing the (0.25 J, 6 ns) second-harmonic (λ = 532 nm) Nd : YAG laser light into a stainless-steel cylindrical cell at a pressure from 200 to 760 Torr. The laser fluence at the focal point is 〉 5 GW/cm2. The spatial variation and consequently the time evolution of the radial propagation velocityU of the generated shock waves were measured via a simple optical system utilizing a HeNe laser beam triply intersecting the propagating shock wave at three successive positions. Using a reflector, we were able to probe the traveling SW in six consecutive positions during its round trip. Good agreement was obtained between the experimental results and the predictions of the point strong explosion theory. It is shown that this method is simple with a fairly good precision. It therefore appears to be useful for the determination of the SW dynamic parameters, namely its Mach number, the pressure at the SW front, the thickness of the compressed air layer and the energy consumed in producing this layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01833801
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetics of Ni2Si growth from pure Ni and Ni(V) films on (111) and (100) Si (1987)
    Springer
    Applied physics 42 (1987), S. 35-39 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618156
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