ISSN:
1432-0630
Keywords:
79.60.Eq
;
68.55.Eg
;
68.60.Dv
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Photoemission spectroscopy with synchrotron radiation was used to study the NdF3/Si(111) interface as a function of annealing temperature for NdF3 films. These films range in thickness from 1–20 monolayers and were deposited at room temperature. Without annealing, both F-Si and Nd-Si bonding is observed, indicating that the planar triangular NdF3 molecules lie flat on the Si(111) substrate. At annealing temperatures between 400 and 500° C, the NdF3/Si(111) interface is dominated by Nd-Si bonding as evidenced from a line-shape analysis of the Si 2 p and Nd 4 f core levels. By resonant excitation of the giant 4 d-4 f absorption resonance, the photoemission signal from the partially occupied 4 f orbitals is enhanced and can be distinguished from the photoemission signal of the overlapping F 2 p valence band. At higher temperatures F is completely lost due to the decomposition of NdF3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331721
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