ISSN:
1432-0630
Keywords:
68.55.+b
;
61.10.−i
;
78.65.Jd
;
78.55.Ds
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have combined photoluminescence and absorption measurements with double crystal x-ray diffraction in order to study the influence of growth conditions on optical and structural properties of Ga0.47In0.53As/Al0.48In0.52As superlattices of 10.5 nm well width grown by molecular beam epitaxy on InP∶Sn substrates. Superlattices with excellent structural properties can be grown even at low substrate temperatures of 500 °C, as indicated by narrow linewidths of the satellite peaks of the x-ray diffraction pattern of 20 to 25 s of arc (FWHM). However, elevated substrate temperatures are required to increase the intensity of the intrinsic luminescent subband transition at 77 K, to reduce the luminescence linewidth to 12 meV (FWHM), and to sharpen the absorption spectra. In addition to the absorption due to the steplike variation of the two-dimensional density of states, we observe excitonic transitions to the excitonic continuum at the subband edges.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00620459
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