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  • Inorganic Chemistry  (5)
  • 68.55.+b  (3)
  • ELECTRONIC COMPONENTS AND CIRCUITS  (2)
  • 1
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    Technical report on galvanic cells with fused-salt electrolytes (1969)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Technical report is presented on sodium and lithium cells using fused salt electrolytes. It includes a discussion of the thermally regenerative galvanic cell and the secondary bimetallic cell for storage of electricity.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: ARG-10297
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Quasi-static vapor pressure measurements on reactive systems in inert atmosphere box (1968)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Apparatus makes vapor pressure measurements on air-sensitive systems in an inert atmosphere glove box. Once the apparatus is loaded with the sample and all connections made, all measuring operations may be performed outside the box. The apparatus is a single-tube adaptation of the double-tube quasi-static technique.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: ARG-90142
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    NASA TECHNICAL REPORTS
  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy (1984)
    Springer
    Applied physics 33 (1984), S. 97-105 
    Details
    ISSN: 1432-0630
    Keywords: 78.65.-s ; 71.70.-d ; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-temperature photoluminescence measurements on nominally undoped AlxGa1−xAs/GaAs quantum well heterostructures (QWHs) grown by molecular beam epitaxy (MBE) exemplified the exclusivelyintrinsic free-exciton nature of the luminescence under moderate excitation conditions. Neither any spectroscopic evidence for alloy clustering in the AlxGa1−xAs barriers nor any extrinsic luminescence due to recombination with residual acceptors has been detected in single and double QWHs when grown at 670 °C under optimized MBE growth conditions. Carrier confinement in AlxGa1−xAs/GaAs QWHs starts at a well width ofL z≌30 nm when x≌0.25. The minor average well thickness fluctuation ofΔL z=4×10−2nm as determined from the excitonic halfwidth allowed the realization of well widths as low asL z=1 nm and thus a shift of the free-exciton line as high as 2.01 eV which is close to the conduction band edge of the employed Al0.43Ga0.57As confinement layer. The measurements further revealed a strongly enhanced luminescence efficiency of the quantum wells as compared to bulk material which is caused by the modified exciton transition probabilities due to carrier localization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617615
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of MBE-grown GaAs subject to an electric field (1986)
    Springer
    Applied physics 39 (1986), S. 21-30 
    Details
    ISSN: 1432-0630
    Keywords: 78.55.-m ; 78.50.-w ; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-temperature photoluminescence of GaAs has been investigated in MBE-grown Al x Ga1−x As-GaAs single heterojunctions subject to an electric field. No peak energy shift is observed in the emission lines due to free excitons and excitons bound to isolated centers when the electric field is applied. In contrast, the excitonic lines arising from the previously described defect-induced bound exciton (DIBX) transitions exhibit a prominent low-energy shift when the electric field is increased. We attribute these lines to excitons bound to acceptor pairs. The excitons bound to distant pairs have smaller binding energies than those bound to closer pairs. They are, therefore, easily dissociated in a weak electric field. The electrons and holes thus dissociated may again be trapped by closer pairs, which results in a low-energy shift of the overall spectrum. The photocurrent measured as a function of the electric field supports Dingle's rule for the valence bandedge discontinuity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177160
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  • 5
    Electronic Resource
    Electronic Resource
    Quantitative evaluation of substrate temperature dependence of Ge incorporation in GaAs during molecular beam epitaxy (1980)
    Springer
    Applied physics 22 (1980), S. 23-30 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.+b ; 72.20.-i ; 78.55-m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Combined Hall effect and low-temperature photoluminescence measurements have been used to perform a thorough evaluation of the growth temperature dependence of Ge incorporation in GaAs during molecular beam epitaxy (MBE) over the entire substrate temperature range (400°≦T s ≦600[°C]) practicable forn-type layer growth. Using a constant As4 to Ga flux ratio of two, growth below 500°C yieldsn-GaAs: Ge films having electrical and optical properties rapidly deteriorating with decreasingT s . Growth at 500° ≦T s ≦600[°C] produces high-qualityn-GaAs: Ge films (N D /N A ≈4) with C as well as Ge residual acceptors competing on the available As sites. The amount of Ge atoms on As sites [GeAs] increases with substrate temperature, whereas simultaneously the amount of C atoms on As sites [CAs] decreases thus leading to the well-establishednonlinear behaviour of the (N A /N D vs. 1/T s plot. Counting the incorporated Ge impurities separately, however, yields alinear behaviour of the ([GeAs]/[GeGa]) vs. 1/T s plot which has exactly the same slope as the (P As 2/P Ga) vs. 1/T s plot derived from vapour pressure data of As2 and Ga over solid GaAs surfaces. The important result is, therefore, that the incorporation behaviour of Ge in GaAs during molecular beam epitaxy is directly correlated with theevaporation behaviour of the growing GaAs surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00897927
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  • 6
    Electronic Resource
    Electronic Resource
    Studie über ein Derivat des fünfwertigen Wolframs (1913)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 81 (1913), S. 102-115 
    Details
    ISSN: 0863-1778
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Die Formel CI2W(OC2H5)3 fügt sich somit in alle bisher mitgeteilten Beobachtungen zwanglos ein.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19130810112
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  • 7
    Electronic Resource
    Electronic Resource
    Beiträge zur Elektrochemie der Chromgruppe. Mitteilung. Wolfram und Uran (1913)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 81 (1913), S. 170-208 
    Details
    ISSN: 0863-1778
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19130810118
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  • 8
    Electronic Resource
    Electronic Resource
    Se17[NbCl6]2 und Se17[TaBr6]2 - zwei neue Vertreter des Strukturtyps Se17[MX6]2Professor Joachim Strähle zum 60. Geburtstag gewidmet (1997)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 623 (1997), S. 780-784 
    Details
    ISSN: 0044-2313
    Keywords: Heptadecaselenium(2+) ; Hexachloroniobate(-) ; Hexabromotantalate(-) ; solvothermal reactions ; crystal structure ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Se17[NbCl6]2 and Se17[TaBr6]2 - Two New Compounds in the Structure Type Sel7[MX6]2The reaction of Se, SeCl4 and NbCl5 in SnCl4 in a sealed glass ampoule at 150°C yields Se17[NbCl6]2 and from Se, SeBr4 and TaBr5 in SiBr4 under the same conditions Se17[TaBr6]2 is formed. Both compounds crystallize triclinic in form of black moisture sensitive crystals, space group P1, Z = 2 (Se17[NbCl6]2: a = 1322.3(5) pm, b = 1309.0(6) pm, c = 1144.9(4) pm, α = 99.18(3)°, β = 99.55(3)°, γ = 112.17(3)°; Se17[TaBr6]2; 1354.5(7) pm, b = 1346.0(9) pm c = 1179.5(6) pm, α = 99.26(5)°, β = 97.81(4)°, γ = 112.52(5)°). Both are isotypic to the previously reported Se17[WCl6]2. The structures are built of octahedral [NbCl6] and [TaBr6] ions, respectively, and of (Se17)2+ ions The cations consist of two Se7 rings which are connected by a Se3 chain, and thus contain two three-coordinate Se atoms which carry formally the positive charge.
    Notes: Durch solvothermale Reaktion von Se, SeCl4 und NbCl5 in SnCl4 in einer geschlossenen Ampulle bei 150°C entsteht Se17[NbCl6]2 und aus Se, SeBr4 und TaBr5 in SiBr4 unter analogen Bedingungen Se17[TaBr6]2. Beide Verbindungen kristallisieren triklin in Form schwarzer, hydrolyseempfindlicher Kristalle, Raumgruppe P1, Z = 2 (Se17[NbCl6]2: a = 1322,3(5) pm, b = 1309,0(6) pm, c = 1144,9(4) pm, α = 99,18(3)°, β = 99,55(3)°, γ = 112,17(3)°; Se17[TaBr6]2: 1354,5(7) pm, b = 1346,0(9) pm, c = 1179,5(6) pm, α = 99,26(5)° β = 97,81(4)°, γ = 112,52(5)°) und sind isotyp zu Se17[WCl6]2 Die Strukturen sind aus oktaedrischen [NbCl6]- - bzw. [TaBr6]-- und aus (Se17)2+-Ionen aufgebaut, die aus jeweils zwei Se7-Ringen bestehen, die über eine Se3-Brücke verknüpft sind. Jedes Ion enthält zwei dreibindige Se-Atome, die formal die positive Ladung tragen.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.199762301123
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  • 9
    Electronic Resource
    Electronic Resource
    SeBr3[AlBr4] und TeI3[AlI4] - zwei weitere Vertreter des SCl3[AlCl4]-Strukturtyps (1995)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 621 (1995), S. 1042-1046 
    Details
    ISSN: 0044-2313
    Keywords: Tribromoselenium (+) ; Triiodotellurium (+) ; Tetrabromoaluminate (-) ; Tetraiodoaluminate (-) ; synthesis ; crystal structure ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: SeBr3[AlBr4] and TeI3[AlI4] - two further Compounds in the SCl3[AlCl4] Structure TypeThe reaction of SeBr4 and AlBr3 in a closed glass ampoule at 150°C yields quantitatively SeBr3[AlBr4] in form of yellow moisture sensitive crystals. From Te, two equivalents of I2, and AlI3 one obtains TeI3[AlI4] in form of dark red, moisture sensitive crystals. Both compounds crystallize monoclinic in the space group Pc (SeBr3[AlBr4]: a = 670.7(7) pm, b = 663.9(5) pm, c = 1 428.6(2) pm, β = 101.21(9)°, TeI3[AlI4]: a = 731.9(1) pm, b = 730.8(1) pm, c = 1 565.5(3) pm, β = 102.01(2)°). They are isotypic and have the SCl3[AlCl4] structure type. The structures are built of tetrahedral AlX4- ions and of pyramidal EX3+ ions (E = S, Se, Te; X = Cl, Br, I). The chalcogen atoms are additionally coordinated by halogen atoms of surrounding AlX4- ions, corresponding to a strongly distorted octahedral coordination EX3+3.
    Notes: Durch Reaktion von SeBr4 mit AlBr3 in einer geschlossenen Ampulle bei 150°C entsteht SeBr3[AlBr4] in Form gelber, hydrolyseempfindlicher Kristalle in quantitativer Ausbeute. Aus Te, AlI3 und zwei Äquivalenten I2 entsteht unter gleichen Bedingungen TeI3[AlI4] in Form dunkelroter, ebenfalls hydrolyseempfindlicher Kristalle. Beide Verbindungen kristallisieren monoklin, Raumgruppe Pc (SeBr3[AlBr4]: a = 670,7(7) pm, b = 663,9(5) pm, c = 1 428,6(2) pm, β = 101,21(9)°, TeI3[AlI4]: a = 731,9(1) pm, b = 730,8(1) pm, c = 1 565,5(3) pm, β = 102,01(2)°). Sie sind isotyp zu SCl3[AlCl4]. Die Strukturen sind aus tetraedrischen AlX4--Ionen und aus pyramidalen EX3+-Ionen (E = S, Se, Te; X = Cl, Br, I) aufgebaut. Das Chalkogen ist dabei von Halogenatomen benachbarter AlX4--Ionen zusätzlich so koordiniert, daß es eine stark verzerrte oktaedrische EX3+3-Koordination aufweist.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19956210625
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  • 10
    Electronic Resource
    Electronic Resource
    Zur Reaktion von CF4, CBrF3 und CBr2F2 mit Kieselglas (1987)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 551 (1987), S. 223-230 
    Details
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Reaction of CF4, CBrF3, and CBr2F2 with SilicaCF4 reacts with silica above 1200 K forming SiF4 and CO2. CBrF3 and CBr2F2 yield SiF4, Br2, CO2, and CO as well as products of pyrolysis, such as C2BrF5, C2Br2F4, and others. The reaction starts at 900 K (CBrF3) or 700 K (CBr2F2), resp. The CO2/CO ratio is higher than expected. SiF4 is absorbed at the surface of silica to a considerable extent.
    Notes: CF4 reagiert mit Kieselglas oberhalb 1200 K unter Bildung von SiF4 und CO2. CBrF3 und CBr2F2 ergeben SiF4, Br2, CO2 sowie CO und zwischenzeitlich als Pyrolyseprodukte unter anderen C2BrF5 und C2Br2F4. Die Reaktion beginnt bei 900 K (CBrF3) bzw. bei 700 K (CBr2F2). Das CO2/CO-Verhältnis ist höher als erwartet. SiF4 wird an der Oberfläche des Kieselglases in beträchtlichem Umfang absorbiert.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19875510826
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