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  • 1
    Electronic Resource
    Electronic Resource
    Laser-reactive ablation deposition of silicon-nitride films (1995)
    Springer
    Applied physics 60 (1995), S. 275-283 
    Details
    ISSN: 1432-0630
    Keywords: 42.55.Gp ; 68.55 ; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon-nitride films were deposited on silicon waters by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05–5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 μm were obtained under specific experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538403
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  • 2
    Electronic Resource
    Electronic Resource
    Tungsten silicide formation by XeCl excimer-laser irradiation of W/Si samples (1993)
    Springer
    Applied physics 56 (1993), S. 391-396 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20.D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report a study of the formation of tungsten silicide at the W-Si interface, induced by multipulse (up to 300 shots) XeCl excimer-laser irradiation of W(150 nm)/Si and W(500 nm)/Si samples. Laser fluences ranging from 0.6 to 1.8 J/cm2 were used. After laser treatment the samples were examined by different diagnostic techniques: Rutherford backscattering spectrometry, X-ray scattering, resistometry, and surface profilometry. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a single 30 ns laser pulse were performed as well. The results indicate that it is possible to obtain a tungsten silicide layer at the W-Si interface at quite low fluences. The layer thickness increases with the number of laser pulses. Complete reaction of the 150 nm thick W film with silicon was obtained at the fluence of 1.2 J/cm2 between 30 and 100 laser pulses and at 1.5 J/cm2 after 30 laser pulses. The sheet resistance of these silicides was 5–10 Ω. At the used fluences for the 500 nm thick W film only the onset of silicide synthesis at the W-Si interface was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324361
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    Paper (German National Licenses)
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