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Defect annealing in phosphorus implanted silicon: A D.L.T.S. study (1979)

Krynicki, J. ; Bourgoin, J. C.

Springer

Applied physics 18 (1979), S. 275-278

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ISSN: 1432-0630

Keywords: 61.70T ; 61.70E

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation are described. Four electron traps are found: atE c -0.21 eV,E c -0.39 eV,E c -0.52 eV andE c -0.58 eV and their cross-sections estimated. The annealing behaviour in the range 450–800°C of these traps is described.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00885514

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