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  • 61.70.At  (2)
  • 61.70.Tm  (1)
  • 78.65  (1)
  • Organic Chemistry  (1)
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  • 1
    Digitale Medien
    Digitale Medien
    Electrical activation of boron-implanted silicon during rapid thermal annealing (1988)
    Springer
    Applied physics 47 (1988), S. 359-366 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70-r ; 61.70.At ; 61.70.Sk
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrical activation of boron implanted in crystalline and preamorphized silicon has been investigated during rapid thermal annealing performed with halogen lamps. Samples implanted with B+ fluences ranging between 5×1014 and 1×1016cm−2 and treated at temperatures between 900°C and 1100°C have been examined. When boron is implanted in crystalline Si, activation proceeds slowly atT〈1000°C and cannot be completed in times typical of rapid thermal annealing (a few tens of seconds). The analysis of carrier profiles indicates that the time constant for activation is strongly affected by local damage and dopant concentration. If the total boron concentration exceeds equilibrium solubility, precipitation occurs concomitant to activation, even if the substitutional boron fraction is still lower than equilibrium solubility. ForT≧1000°C complete activation is obtained in times of about 10 s. In the case of preamorphized Si the activation occurs very quickly, during the recrystallization of the amorphous layer, for all the examined temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615499
    Standort Signatur Erwartet Verfügbarkeit
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    Artikel (Nationallizenzen)
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  • 2
    Digitale Medien
    Digitale Medien
    Buried (Fe1 −x Co x )Si2 layers with variable band gap formed by ion beam synthesis (1996)
    Springer
    Applied physics 62 (1996), S. 155-162 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Buried layers of (Fe1 −x Co x )Si2 were prepared by sequent implantation of iron and cobalt into (100) silicon. The depth distributions of iron and cobalt and the atomic concentration ratio silicon/metal were determined by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). The phase composition and the microstructure of the silicide layer were studied by X-ray diffraction and electron microscopy. The band gap energy was evaluated from Infrared (IR) reflection and transmission experiments. The semiconductingβ-FeSi2 structure remains stable up to a cobalt fraction ofx = 0.2 if the iron silicide is stabilized by an intermediate annealing between iron and cobalt implantation. With increasing cobalt content, the electrical resistivity as well as the energy of the direct band gap of the (Fe1 −x Co x )Si2 layer decrease. In this way, a band gap tuning between 0.84 and 0.70 eV is possible. The gap energy is found to vary quadratically with the Co content in the composition range 0 〈x 〈 0.15.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01575713
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Rapid thermal annealing of high dose arsenic-implanted silicon (1990)
    Springer
    Applied physics 51 (1990), S. 53-59 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70.Tm ; 66.30.Jt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A model for rapid thermal annealing of high dose arsenic-implanted silicon layers is proposed. The kinetics of arsenic clustering was taken into account. Assuming that all arsenic is initially electrically active, the clustering rate is found to be enhanced during the early stage of annealing in comparison with results reported for conventional furnace tempering [1]. An influence of a low temperature preannealing on the diffusion behaviour of arsenic has not been observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324465
    Standort Signatur Erwartet Verfügbarkeit
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    Artikel (Nationallizenzen)
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  • 4
    Digitale Medien
    Digitale Medien
    Electrical activation of boron-implanted silicon during rapid thermal annealing (1988)
    Springer
    Applied physics 47 (1988), S. 359-366 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70-r ; 61.70.At ; 61.70.Sk
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrical activation of boron implanted in crystalline and preamorphized silicon has been investigated during rapid thermal annealing performed with halogen lamps. Samples implanted with B+ fluences ranging between 5×1014 and 1×1016cm−2 and treated at temperatures between 900°C and 1100°C have been examined. When boron is implanted in crystalline Si, activation proceeds slowly atT〈1000°C and cannot be completed in times typical of rapid thermal annealing (a few tens of seconds). The analysis of carrier profiles indicates that the time constant for activation is strongly affected by local damage and dopant concentration. If the total boron concentration exceeds equilibrium solubility, precipitation occurs concomitant to activation, even if the substitutional boron fraction is still lower than equilibrium solubility. ForT≧1000°C complete activation is obtained in times of about 10 s. In the case of preamorphized Si the activation occurs very quickly, during the recrystallization of the amorphous layer, for all the examined temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615499
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Fe(III)-Komplexe mit „gemischter“ Koordinationssphäre aus Oxalat- und Phenolat-Liganden (1979)
    New York, NY : Wiley-Blackwell
    Journal für Praktische Chemie/Chemiker-Zeitung 321 (1979), S. 75-85 
    Details
    ISSN: 0021-8383
    Schlagwort(e): Chemistry ; Organic Chemistry
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Notizen: Fe(III)-Complexes with Mixed Ligands Consisting of Oxalate and Phenolate LigandsThe formation of mixed-ligand complexes between iron(III) ion, potassium oxalate and potassium salts of salicylic acid, sulfosalicylic acid, catechol, sodium 3,5-sulfocatechol („tiron“) and tetrachlorocatechol, respectively, has been investigated. There were obtained solid products with the approximate composition K3[Fe(C2O4)3-xLx] · n H2O (L = phenolat; x = 1; 2). For the synthesis of the above compounds ligand exchange reactions as well as addition-technique of oxalic acid followed by potassium phenolat to Fe2O3 · aq has been used. Through spectroscopic examination of the obtained products was found, that Fe3+-ion is simultaneously coordinated by oxalat and phenolat. Probably the products consist of at least two components as Fe(III) was found in two different bond states.
    Zusätzliches Material: 2 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/prac.19793210110
    Standort Signatur Erwartet Verfügbarkeit
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