ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Inorganic Chemistry  (2)
  • 61.16.-d  (1)
  • 61.70  (1)
  • Liquid phase epitaxy  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Direct-energy processes and phase transitions in silicon (1993)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 15 (1993), S. 399-414 
    Details
    ISSN: 0392-6737
    Keywords: Ions ; Ultraviolet and visible radiation (including laser beams) ; Solid phase epitaxy ; Liquid phase epitaxy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The phase transition of amorphous to single-crystal silicon has been investigated not only by conventional heating in a furnace but under direct-energy processes like pulsed-laser and ion beam irradiation. The first method allows the experimental determination of the free-energy-temperature diagram for amorphous, liquid and crystalline silicon. Due to the very fast heating and cooling the amorphous-to-liquid transition can be investigated in both directions. Ion beam irradiation induces either a layer-by-layer amorphization or crystallization by the movement of the initial α-Si/c-Si interface according to the substrate temperature. The two processes are governed by different types of defects created by the beam in the amorphous and in the crystalline side of the interface. The existence of a native-oxide layer at the interface between single crystal and deposited layer retards the ion beam crystallization until oxygen atoms are dispersed by beam mixing in the matrix. A recent alternative way of crystallizing deposited layers is by short high-temperature anneals obtained by incoherent-light irradiations. In this case the rupture of the native-oxide layer is achieved by the agglomeration of oxide into beads, thus allowing the realignment. This technique appears to be particularly promising for several technological applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02456922
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Laser induced single-crystal transition in polycrystalline silicon (1978)
    Springer
    Applied physics 17 (1978), S. 111-113 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.x ; 68.20.-s ; 61.16.-d ; 42.50.Qm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 〈100〉 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 Å thick polycrystalline layer is about 70 MW/cm2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885039
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Laser effects in silicon with deep amorphous layer (1979)
    Springer
    Applied physics 20 (1979), S. 353-356 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of single-pulse ruby laser irradiation have been investigated in Si samples with disorder layers located at a depth of 2000 Å from the crystal surface and extending up to 8000 Å. This disorder was obtained by implantation with 350 keV N+ to a fluence of 2×1016/cm2. Channeling, diffraction and transmission electron microscopy were used to characterize the structure of the irradiated layers. After 1.5 J/cm2 irradiation the damaged layer reorders partially, while for about 2.0J/cm2 the surface single crystal becomes polycrystalline. At a higher energy density all the material undergoes the transition to single crystal. Calculations based on the liquid model accounts in part for the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895009
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Ueber einige Bromderivate der Campherreihe (1895)
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 28 (1895), S. 819-820 
    Details
    ISSN: 0365-9496
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cber.189502801184
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Ueber die Einwirkung von salpetriger Säure auf einige Oxime der Campher- (Camphan-) reihe (1895)
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 28 (1895), S. 1077-1078 
    Details
    ISSN: 0365-9496
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cber.189502801231
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...