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  • 61.14.Hg  (1)
  • 71.35.+z  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Virtual-surfactant-induced wetting in strained-layer heteroepitaxy (1993)
    Springer
    Applied physics 56 (1993), S. 91-94 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.−a ; 61.14.Hg ; 82.65.Dp ; 61.50.Cj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We show that surface stoichiometry and growth mode are intimately related for heteroepitaxy of InAs on GaO0.47In0.53As. Under As-stable conditions during molecular beam epitaxy, the high strain of the InAs film induces a morphological phase-transition from layer-by-layer to island nucleation. In contrast, under In-stable conditions without direct As4 flux, islanding is inhibited. The In-stabilized surface imposes limitations to the migration of both As and In adatoms and forces layer-by-layer nucleation, thus acting as a virtual surfactant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351909
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  • 2
    Electronic Resource
    Electronic Resource
    Low-density band-filling in strained InAs quantum wells (1993)
    Springer
    Applied physics 56 (1993), S. 109-112 
    Details
    ISSN: 1432-0630
    Keywords: 78.65.Fa ; 71.35.+z ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We study the low-temperature photoluminescence (PL) of strained InAs single quantum wells (SQWs) embedded in a Ga0.47In0.53As matrix grown on InP substrates by modified solid-source molecular beam epitaxy. The spectra are interpreted in the frame of a two-level rate equation model describing the carrier dynamics in the structures. We show that band-filling occurs in these QWs for an excitation power as low as 30 Wcm−2. Moreover, the spectra reveal that the band-filling results from the rapid population of the hole subband. This observation highlights the low in-plane heavy-hole mass in the compressively strained film. Our results therefore demonstrate the high potential of InAs/Ga0.47In0.53As QW nonlinear optical devices operating in the mid-IR wavelength range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00517675
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    Paper (German National Licenses)
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