Electronic Resource
Amsterdam
:
Elsevier
Journal of Physics and Chemistry of Solids
46 (1985), S. 1207-1214
ISSN:
0022-3697
Keywords:
5d-transition atoms
;
deep levels
;
electronic structure
;
relativistic effects
;
semiconductors
;
silicon
;
substitutional impurities
Source:
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:
Chemistry and Pharmacology
,
Physics
Type of Medium:
Electronic Resource
URL:
http://linkinghub.elsevier.com/retrieve/pii/0022-3697(85)90150-7
Permalink
|
Location |
Call Number |
Expected |
Availability |