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  • 1
    Publication Date: 2020-02-12
    Keywords: 550 - Earth sciences
    Type: info:eu-repo/semantics/article
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  • 2
    Publication Date: 2011-08-19
    Description: A resonant-tunneling diode has oscillated at X-band frequencies in a microwave circuit consisting of a slot antenna coupled to a semiconfocal open resonator. Coupling between the open resonator and the slot oscillator improves the noise-to-carrier ratio by about 36 dB relative to that of the slot oscillator alone in the 100-200 kHz range. A circuit operating near 10 GHz has been designed as a scale model for millimeter- and submillimeter-wave applications.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 27; 647-649
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  • 3
    Publication Date: 2011-08-19
    Description: Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Microwave and Optical Technology Letters (ISSN 0895-2477); 4; 19-23
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  • 4
    Publication Date: 2011-08-19
    Description: Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W/sq cm, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 58; 2291-229
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  • 5
    Publication Date: 2011-08-19
    Description: InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 58; 275-277
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  • 6
    Publication Date: 2019-01-25
    Description: We have fabricated and characterized a quasioptically stabilized resonant-tunneling-diode (RTD) oscillator having attractive performance characteristics for application as a radiometric local oscillator. The fundamental frequency of the oscillator is tunable from about 200 to 215 GHz, the instantaneous linewidth is between 10 and 20 kHz, and the output power across the tuning band is about 50 micro-W. The narrow linewidth and fine tuning of the frequency are made possible by a scanning semiconfocal open cavity which acts as the high-Q resonator for the oscillator. The cavity is compact, portable, and insensitive to vibration and temperature variation. The total dc power consumption (RTD plus bias supply) is only 10 mW. The present oscillator provides the highest power obtained to date from an RTD above 200 GHz. We attribute this partly to the use of the quasioptical resonator, but primarily to the quality of the RTD. It is fabricated from the In(0.53)Ga(0.47)As/AlAs materials system, which historically has yielded the best overall resonant-tunneling characteristics of any material system. The RTD active area is 4 sq microns, and the room-temperature peak current density and peak-to-valley current ratio are 2.5x10(exp 5) A cm(exp -2) and 9, respectively. The RTD is mounted in a WR-3 standard-height rectangular waveguide and is contacted across the waveguide by a fine wire that protrudes through a via hole in a Si3N4 'honeycomb' overlayer. We estimate that the theoretical maximum frequency of oscillation of this RTD is approximately 1.1 THz, and that scaled-down versions of the same quasioptical oscillator design should operate in a fundamental mode up to frequencies of at least 500 GHz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings; p 439
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  • 7
    Publication Date: 2019-08-28
    Description: The resonant tunnelling diode (RTD) oscillator has been demonstrated for the first time as a local oscillator (LO) in a heterodyne receiver. Noise measurements made on a sensitive 200 GHz superconductor-insulator-superconductor receiver using both a multiplied Gunn diode and an RTD oscillator as the LO revealed no difference in receiver noise as a function of oscillator type.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 29; 3; p. 288-290.
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  • 8
    Publication Date: 2019-07-12
    Description: A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: AD-A179034 , ESD-TR-86-199 , Applied Physics Letters (ISSN 0003-6951); 50; 83-85
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