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  • Articles  (2)
  • 44.30  (1)
  • 73.40-L  (1)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (2)
  • Political Science
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  • Articles  (2)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (2)
  • Political Science
  • Physics  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Temperature evolution during scanning electron beam processing of silicon (1996)
    Springer
    Applied physics 62 (1996), S. 451-457 
    Details
    ISSN: 1432-0630
    Keywords: 44.30 ; 79.20 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Temperature profile evolutions produced by a scanning electron beam in crystalline silicon have been numerically calculated using a two-dimensional finite-element scheme. The temperature dependence of the different silicon properties as well as the electron penetration effects have been taken into account. Numerical calculations carried out at different conditions have been compared with experimental melting-threshold measurements using an electron beam with a Gaussian power density distribution. The good agreement between numerical calculations and experimental results proves the validity of the two-dimensional approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567116
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characteristics of laser-annealed silicon diodes (1987)
    Springer
    Applied physics 42 (1987), S. 273-277 
    Details
    ISSN: 1432-0630
    Keywords: 73.40-L
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electrical measurements, performed on As-implanted and laser-annealed silicon diodes, have shown poorI–V characteristics with high values of the recombination current and anomalous C-V characteristics. This behavior is attributed to the existence of defects, created during the ion-implantation process, that can not been annealed by the laser treatment. A best improve in the electrical characteristics is obtained after a post-laser annealing in furnace at 600 °C, however the defects are not completely removed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616562
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    Paper (German National Licenses)
    Fulltext
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