ISSN:
1432-0630
Keywords:
73.61.Ng
;
41.75
;
68.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Ultrathin silicon-nitride films have been synthesized on silicon substrates by low-energy nitrogen-ionbeam bombardment. The thicknesses of the obtained films are found to increase slightly with the duration of bombardment. Capacitance-voltage and current-voltage characteristics of silicon-nitride films prepared at different bombarding times show that the density of damages, charges in the films and interface states, the capacitance of the obtained ultrathin silicon-nitride films, the flat-band capacitance and the flat-band voltage increase with the duration of the bombarding process. The results of these analyses suggest a short bombarding processing for such a silicon-nitridation technique proposed here.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01542876
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