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  • structural characterization  (2)
  • 25.55.−e  (1)
  • PACS. 74.76.-w Superconducting films - 77.55.+f Dielectric thin films - 77.80.-e Ferroelectricity and antiferroelectricity  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 7 (1994), S. 197-200 
    ISSN: 1572-9605
    Keywords: Superconducting superlattices ; structural characterization ; flux motion ; critical currents
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We investigated the structural and superconducting properties ofc-axis oriented (YBa2Cu3O7) nY /(PrBa2Cu3O7) npr superlattices with thicknesses of the individual layers down to one unit cell (10≥nY≥1; 18〉nPr≥ 1). By transmission electron microscopy and X-ray diffraction we find an excellent structural quality of the samples, though the quantitative analysis shows the existence of defects. In superlattices with decoupled YBa2Cu3O7 layers of two unit cell thickness we find a highT c value of 75 K. We probed the flux line structure in the superlattices by measurements of the critical current density in magnetic fields. The experiments show that the flux-line dynamics is dominated by the movement of pancake vortices.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-9605
    Keywords: Bi-2212 thin films ; dc sputtering ; structural characterization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We report a dc sputtering method for the fullin situ preparation of Bi2Sr2CaCu2O8+δ thin films on SrTiO3 and LaAlO3.T c values of more than 90 K can be achieved by oxidizing annealing below the melting point, followed by a reducing anneal at 500°C. The structural properties of the films are revealed by X-ray diffraction in Bragg-Brentano geometry (strongc-axis orientation with FWHM (0 0 10)=0.3) and also byΦ scans (epitaxy within the substrate plane). Rutherford backscattering and channeling confirmed the correct composition of the cations while the minimum yield,χ min, is 23%. Depth profiles by SNMS show a very homogeneous distribution of the cations with no detectable loss of bismuth near the surface. The surface morphology of the films was studied by SEM and by STM. Patterning of the films in lateral geometry can be performed by photolithographic techniques without degradation ofT c .
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1434-601X
    Keywords: 21.10.Ky ; 25.55.−e ; 34.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A precision plunger set-up was used to determine in time-differential measurements of hyperfine interactions the degree of polarization of 1s- and 2s-electrons in H- and Li-like oxygen ions on their emergence from magnetized Ni- and Gd-layers into vacuum. In addition a time-integral measurement with Fe-layers served to obtain the polarization of 2s-electrons only. For all three ferromagnetic materials the degree of polarization of 2s-electrons is found to be twice as large as for 1s-electrons. The data are discussed in the context of transient magnetic fields and their underlying polarization mechanism.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 14 (2000), S. 477-481 
    ISSN: 1434-6036
    Keywords: PACS. 74.76.-w Superconducting films - 77.55.+f Dielectric thin films - 77.80.-e Ferroelectricity and antiferroelectricity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate a 3% contribution of the irreversible domain wall motion to the total dielectric constant.
    Type of Medium: Electronic Resource
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